Dynamic Parameter and Avalanche Testers

SX5012 5000 V 1200 A IGBT Test System

High power IGBT characteristic tester with 1200 A pulse current and 5000 V withstand test.

CategoryDynamic Parameter and Avalanche Testers

Overview

A comprehensive characteristic tester for high power IGBTs and MOS devices, with graphical PC software, an on-board database and intelligent protection of the device under test.

Key Features

Measures a range of IGBT and MOS devices
Maximum pulse current 1200 A
Pulse width 50 µs to 300 µs
Vce measurement accuracy 2 mV
Vce measurement range greater than 10 V
Graphical PC interface
Intelligent protection of the device under test
Host software with database
Forward voltage of the internal diode of MOS and IGBT devices

Specifications

Collector pulse current1200 A

Pulse width50 to 300 µs, stepped

Forward saturation voltagegreater than 10 V

Trigger pulse frequency0.1 to 10 Hz, selected by device rating

Power input220 V AC, 50 Hz, under 500 W, rated 200 W

Fuse10 A

Fibre link3 m, can be extended

Gate voltage Vge-20 to +20 V

Gate leakage Ig-2 to 2 µA

Vgeth3 to 10 V at IC = 900 mA, Vce = 5 V

Withstand voltage test0 to 5000 V DC

Leakage at withstand test0 to 2 mA at Vce = 5000 V; 0 to 4 mA at Vce = 2000 V

Applications

High power IGBT
High power MOSFET
High power diode
Standard low value resistors
Other test applications

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FAQ

Frequently Asked Questions

What is the lead time and the price for this system?

Configuration decides both. Tell us the device, the package and the parameters you need and our engineers will confirm the configuration, the price and the delivery time.

Can we see a demonstration?

Yes. Contact our sales engineers to arrange a demonstration or a trial measurement of your own device.

Do you provide installation, training and calibration in China?

Yes. Installation, training, calibration and repair are handled by our own engineers in China.